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edition april 4, 1996 6251-365-1ds hal525 hall effect sensor ic edition march 10, 1999 6251-465-2ds micr onas intermet all micr onas intermet all micronas micronas micr onas intermet all micr onas intermet all micronas micronas
hal525 micronas intermetall 2 contents page section title 3 1. introduction 3 1.1. features 4 1.2. marking code 4 1.3. operating junction temperature range 4 1.4. hall sensor package codes 4 1.5. solderability 5 2. functional description 6 3. specifications 6 3.1. outline dimensions 6 3.2. dimensions of sensitive area 6 3.3. positions of sensitive areas 7 3.4. absolute maximum ratings 7 3.5. recommended operating conditions 8 3.6. electrical characteristics 9 3.7. magnetic characteristics 14 4. application notes 14 4.1. ambient temperature 14 4.2. extended operating conditions 14 4.3. start-up behavior 14 4.4. emc 16 5. data sheet history
hal525 micronas intermetall 3 hall effect sensor family in cmos technology release notes: revision bars indicate significant changes to the previous edition. 1. introduction the hal525 is a hall switch produced in cmos technol- ogy. the sensor includes a temperature-compensated hall plate with active offset compensation, a compara- tor, and an open-drain output transistor. the comparator compares the actual magnetic flux through the hall plate (hall voltage) with the fixed reference values (switching points). accordingly, the output transistor is switched on or off. the hal525 has a latching behavior and requires a magnetic north and south pole for correct functioning. the output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. the output does not change if the magnetic field is removed. for changing the output state, the opposite magnetic field polarity must be applied. the active offset compensation leads to constant mag- netic characteristics over supply voltage and tempera- ture range. in addition, the magnetic parameters are ro- bust against mechanical stress effects. the sensor is designed for industrial and automotive ap- plications and operates with supply voltages from 3.8 v to 24 v in the ambient temperature range from 40 c up to 150 c. the hal525 is available in an smd-package (sot-89a) and in a leaded version (to-92ua). the introduction of the additional smd-package sot-89b is planned for 1999. 1.1. features: switching offset compensation at typically 115 khz typical b on : 14 mt at room temperature typical b off : 14 mt at room temperature typical temperature coefficient of magnetic switching points is 2000 ppm/k operates from 3.8 v to 24 v supply voltage overvoltage protection at all pins reverse-voltage protection at v dd -pin magnetic characteristics are robust against mechani- cal stress effects short-circuit protected open-drain output by thermal shut down operates with static magnetic fields and dynamic mag- netic fields up to 10 khz on-chip temperature compensation circuitry mini- mizes shifts of magnetic characteristics over tempera- ture constant switching points over a wide supply voltage range the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the mag- netic characteristics ideal sensor for window lifter, ignition timing, and revo- lution counting in extreme automotive and industrial environments emc corresponding to din 40839
hal525 micronas intermetall 4 1.2. marking code all hall sensors have a marking on the package surface (branded side). this marking includes the name of the sensor and the temperature range. type temperature range a k e c hal525 525a 525k 525e 525c 1.3. operating junction temperature range a: t j = 40 c to +170 c k: t j = 40 c to +140 c e: t j = 40 c to +100 c c: t j = 0 c to +100 c the hall sensors from micronas intermetall are specified to the chip temperature (junction temperature t j ). the relationship between ambient temperature (t a ) and junction temperature is explained in section 4.1. on page 14. 1.4. hall sensor package codes type: 525 halxxxpa-t temperature range: a, k, e, or c package: sf for sot-89b so for sot-89a ua for to-92ua type: 525 package: to-92ua temperature range: t j = 40 c to +100 c example: hal525ua-e hall sensors are available in a wide variety of packaging versions and quantities. for more detailed information, please refer to the brochure: aordering codes for hall sensorso. 1.5. solderability all packages: according to iec68-2-58 out gnd 3 2 1 v dd fig. 11: pin configuration
hal525 micronas intermetall 5 2. functional description the hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. if a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased hall plate forces a hall voltage proportional to this field. the hall voltage is compared with the actual threshold level in the comparator. the temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. if the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. the built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. magnetic offset caused by mechanical stress is com- pensated for by using the aswitching offset compensa- tion techniqueo. therefore, an internal oscillator pro- vides a two phase clock. the hall voltage is sampled at the end of the first phase. at the end of the second phase, both sampled and actual hall voltages are aver- aged and compared with the actual switching point. sub- sequently, the open drain output switches to the ap- propriate state. the time from crossing the magnetic switching level to switching of output can vary between zero and 1/f osc . shunt protection devices clamp voltage peaks at the output-pin and v dd -pin together with external series resistors. reverse current is limited at the v dd -pin by an internal series resistor up to 15 v. no external reverse protection diode is needed at the v dd -pin for reverse voltages ranging from 0 v to 15 v. fig. 21: hal525 block diagram hal5xx temperature dependent bias switch hysteresis control comparator output v dd 1 out 3 clock hall plate gnd 2 hal525 short circuit & overvoltage protection reverse voltage & overvoltage protection t v ol v out 1/f osc = 9 m s fig. 22: timing diagram v oh b b on f osc t t t f t i dd t
hal525 micronas intermetall 6 3. specifications 3.1. outline dimensions fig. 31: plastic small outline transistor package (sot-89a) weight approximately 0.04 g dimensions in mm 4.55 0.1 2.6 0.1 0.4 0.4 1.7 0.4 1.5 3.0 0.06 0.04 branded side spgs7001-7-a3/1e sensitive area top view y 123 2 4 0.2 1.53 0.05 0.125 0.7 x1 x2 fig. 32: plastic small outline transistor package (sot-89b) weight approximately 0.035 g dimensions in mm 2.55 0.1 0.4 0.4 0.4 1.5 3.0 0.06 0.04 branded side spgs0022-3-a3/1e sensitive area top view y 123 4 0.2 1.15 0.05 0.125 0.3 4.55 0.1 1.7 2 x1 x2 note: this package will be introduced in 1999. samples are available. contact the sales offices for high volume delivery. 0.75 0.2 fig. 33: plastic transistor single outline package (to-92ua) weight approximately 0.12 g dimensions in mm sensitive area 0.55 branded side 0.36 0.8 0.3 45 y 14.0 min. 1.27 1.27 (2.54) 123 0.42 1.5 0.05 4.06 0.1 3.05 0.1 0.48 spgs7002-7-a/2e 3.1 0.2 x2 x1 for all package diagrams, a mechanical tolerance of 50 m m applies to all dimensions where no tolerance is explicitly given. 3.2. dimensions of sensitive area 0.25 mm x 0.12 mm 3.3. positions of sensitive areas sot-89a sot-89b to-92ua |x 2 x 1 | / 2 < 0.2 mm y = 0.98 mm 0.2 mm y = 0.95 mm 0.2 mm y = 1.0 mm 0.2 mm
hal525 micronas intermetall 7 3.4. absolute maximum ratings symbol parameter pin no. min. max. unit v dd supply voltage 1 15 28 1) v v p test voltage for supply 1 24 2) v i dd reverse supply current 1 50 1) ma i ddz supply current through protection device 1 200 3) 200 3) ma v o output voltage 3 0.3 28 1) v i o continuous output on current 3 50 1) ma i omax peak output on current 3 250 3) ma i oz output current through protection device 3 200 3) 200 3) ma t s storage temperature range 65 150 c t j junction temperature range 40 40 150 170 4) c 1) as long as t j max is not exceeded 2) with a 220 w series resistance at pin 1 corresponding to test circuit 1 3) t<2 ms 4) t < 1000h stresses beyond those listed in the aabsolute maximum ratingso may cause permanent damage to the device. this is a stress rating only. functional operation of the device at these or any other conditions beyond those indicated in the arecommended operating conditions/characteristicso of this specification is not implied. exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. 3.5. recommended operating conditions symbol parameter pin no. min. max. unit v dd supply voltage 1 3.8 24 v i o continuous output on current 3 0 20 ma v o output voltage (output switched off) 3 0 24 v
hal525 micronas intermetall 8 3.6. electrical characteristics at t j = 40 c to +170 c , v dd = 3.8 v to 24 v, as not otherwise specified in conditions typical characteristics for t j = 25 c and v dd = 12 v symbol parameter pin no. min. typ. max. unit conditions i dd supply current 1 2.3 3 4.2 ma t j = 25 c i dd supply current over temperature range 1 1.6 3 5.2 ma v ddz overvoltage protection at supply 1 28.5 32 v i dd = 25 ma, t j = 25 c, t = 20 ms v oz overvoltage protection at output 3 28 32 v i oh = 25 ma, t j = 25 c, t = 20 ms v ol output voltage 3 130 280 mv i ol = 20 ma, t j = 25 c v ol output voltage over temperature range 3 130 400 mv i ol = 20 ma i oh output leakage current 3 0.06 0.1 m a output switched off, t j = 25 c, v oh = 3.8 to 24 v i oh output leakage current over temperature range 3 10 m a output switched off, t j 150 c, v oh = 3.8 to 24 v f osc internal oscillator chopper frequency 95 115 khz t j = 25 c, f osc internal oscillator chopper fre- quency over temperature range 85 115 khz t j = 30 c to 100 c f osc internal oscillator chopper fre- quency over temperature range 73 115 khz t en(o) enable time of output after setting of v dd 1 30 70 m s v dd = 12 v b > b on + 2 mt or b < b off 2 mt t r output rise time 3 75 400 ns v dd = 12 v, r l = 820 ohm t f output fall time 3 50 400 ns r l = 820 ohm , c l = 20 pf r thjsb case sot-89a sot-89b thermal resistance junction to substrate backside 150 200 k/w fiberglass substrate 30 mm x 10 mm x 1.5mm, pad size see fig. 34 r thja case to-92ua thermal resistance junction to soldering point 150 200 k/w fig. 34: recommended pad size sot-89x dimensions in mm 5.0 2.0 2.0 1.0
hal525 micronas intermetall 9 3.7. magnetic characteristics at t j = 40 c to +170 c, v dd = 3.8 v to 24 v, typical characteristics for v dd = 12 v magnetic flux density values of switching points. positive flux density values refer to the magnetic south pole at the branded side of the package. parameter on point b on off point b off hysteresis b hys magnetic offset unit t j min. typ. max. min. typ. max. min. typ. max. min. typ. max. 40 c 11.8 15.8 19.2 19.2 15.8 11.8 27.4 31.6 35.8 0 mt 25 c 11 14 17 17 14 11 24 28 32 2 0 2 mt 100 c 8 11 15.5 15.5 11 8 18.5 22 28.7 0 mt 140 c 6.5 10 14 14 10 6.5 16 20 26 0 mt 170 c 5 8.5 13 13 8.5 5 12 17 25 0 mt the hysteresis is the difference between the switching points b hys = b on b off the magnetic offset is the mean value of the switching points b offset = (b on + b off ) / 2 fig. 35: definition of magnetic switching points b hys output voltage 0 b off b on v ol v o b
hal525 micronas intermetall 10 20 15 10 5 0 5 10 15 20 0 5 10 15 20 25 30 v mt v dd b on b off hal525 b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 36: typical magnetic switching points versus supply voltage 20 15 10 5 0 5 10 15 20 3 3.5 4.0 4.5 5.0 5.5 6.0 v mt v dd b on b off b on b off t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 37: typical magnetic switching points versus supply voltage hal525 20 15 10 5 0 5 10 15 20 50 0 50 100 150 200 c mt t a , t j b on b off b on max b on min b off max b off min fig. 38: magnetic switching points versus temperature v dd = 4.5 v...24 v v dd = 3.8 v b on typ b off typ hal525 note: in the diagram atypical magnetic switching points versus ambient temperatureo the curves for b on min, b on max, b off min, and b off max refer to junction tem- perature, whereas typical curves refer to ambient temperature.
hal525 micronas intermetall 11 15 10 5 0 5 10 15 20 25 1510 5 0 5 10 15 20 25 30 35 v ma v dd i dd t a = 40 c t a = 25 c t a =170 c fig. 39: typical supply current versus supply voltage hal525 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 12345678 v ma v dd i dd t a = 40 c t a = 25 c t a = 170 c t a = 100 c fig. 310: typical supply current versus supply voltage hal525 0 1 2 3 4 5 50 0 50 100 150 200 c ma t a i dd v dd = 3.8 v v dd = 12 v v dd = 24 v fig. 311: typical supply current versus ambient temperature hal525 0 20 40 60 80 100 120 140 160 50 0 50 100 150 200 c khz t a f osc v dd = 3.8 v v dd = 4.5 v...24 v fig. 312: typ. internal chopper frequency versus ambient temperature hal525
hal525 micronas intermetall 12 0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30 v mv v dd v ol t a = 40 c t a = 25 c t a = 170 c i o = 20 ma t a = 100 c fig. 313: typical output low voltage versus supply voltage hal525 0 100 200 300 400 500 600 34567 v mv v dd v ol t a = 40 c t a = 25 c t a = 170 c i o = 20 ma t a =100 c fig. 314: typical output low voltage versus supply voltage hal525 0 100 200 300 400 50 0 50 100 150 200 c mv t a v ol fig. 315: typical output low voltage versus ambient temperature v dd = 3.8 v v dd = 4.5 v v dd = 24 v i o = 20 ma hal525 15 20 25 30 35 v a v oh i oh t a = 40 c t a = 170 c t a = 150 c t a = 100 c t a = 25 c 10 6 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 3 10 4 fig. 316: typical output high current versus output voltage hal525
hal525 micronas intermetall 13 50 0 50 100 150 200 c m a t a i oh v oh = 24 v v oh = 3.8 v 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 fig. 317: typical output leakage current versus ambient temperature hal525 30 20 10 0 10 20 30 0.01 0.10 1.00 10.00 100.00 1000.00 db m a f i dd v dd = 12 v t a = 25 c quasi-peak- measurement max. spurious signals 1 10 100 1000 mhz fig. 318: typ. spectrum of supply current hal525 0 10 20 30 40 50 60 70 80 0.01 0.10 1.00 10.00 100.00 1000.00 1 10 100 1000 mhz db v f v dd v p = 12 v t a = 25 c quasi-peak- measurement test circuit 2 max. spurious signals fig. 319: typ. spectrum of supply voltage hal525
hal525 micronas intermetall 14 4. application notes 4.1. ambient temperature due to the internal power dissipation, the temperature on the silicon chip (junction temperature t j ) is higher than the temperature outside the package (ambient tem- perature t a ). t j = t a + d t at static conditions, the following equation is valid: d t = i dd * v dd * r th for typical values, use the typical parameters. for worst case calculation, use the max. parameters for i dd and r th , and the max. value for v dd from the application. for all sensors, the junction temperature range t j is specified. the maximum ambient temperature t amax can be calculated as: t amax = t jmax d t 4.2. extended operating conditions all sensors fulfill the electrical and magnetic characteris- tics when operated within the recommended operating conditions (see page 7). supply voltage below 3.8 v typically, the sensors operate with supply voltages above 3 v, however, below 3.8 v some characteristics may be outside the specification. note: the functionality of the sensor below 3.8 v has not been tested. for special test conditions, please contact micronas intermetall. 4.3. start-up behavior due to the active offset compensation, the sensors have an initialization time (enable time t en(o) ) after applying the supply voltage. the parameter t en(o) is specified in the electrical characteristics (see page 8). during the initialization time, the output state is not de- fined and the output can toggle. after t en(o) , the output will be low if the applied magnetic field b is above b on . the output will be high if b is below b off . for magnetic fields between b off and b on , the output state of the hal sensor after applying v dd will be either low or high. in order to achieve a well-defined output state, the applied magnetic field must be above b onmax , respectively, below b offmin . 4.4. emc for applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see figures 41 and 42). the series resistor and the capacitor should be placed as closely as possible to the hal sensor. the emc performance has been tested in a lab environ- ment with emc optimized printed circuit board layouts. the results in the following tables show that function classes a and c could be reached in these investiga- tions. depending on customer circuit designs and lay- outs, emc results obtained in those applications may be different from the ones obtained in the micronas intermetall lab investigations. test circuits for electromagnetic compatibility test pulses v emc corresponding to din 40839. note: the international standard iso 7637 is similar to the used product standard din 40839. out gnd 3 2 1v dd 4.7 nf v emc r v 220 w r l 680 w fig. 41: test circuit 1 out gnd 3 2 1v dd 4.7 nf v emc v p r v 220 w r l 1.2 k w 20 pf fig. 42: test circuit 2
hal525 micronas intermetall 15 interferences conducted along supply lines in 12 v onboard systems product standard: din 40839 part 1 test- pulse severity level u s in v test circuit pulses/ time function class remarks 1 iv 100 1 5000 c 5 s pulse interval 2 iv 100 1 5000 c 0.5 s pulse interval 3a iv 150 2 1 h a 3b iv 100 2 1 h a 4 iv 7 2 5 a 5 iv 86.5 1 10 c 10 s pulse interval electrical transient transmission by capacitive and inductive coupling via lines other than the supply lines product standard: din 40839 part 3 test- pulse severity level u s in v test circuit pulses/ time function class remarks 1 iv 30 2 500 a 5 s pulse interval 2 iv 30 2 500 a 0.5 s pulse interval 3a iv 60 2 10 min a 3b iv 40 2 10 min a radiated disturbances product standard: din 40839 part 4 test conditions temperature: room temperature (22 ... 25 c) supply voltage: 13 v lab equipment: tem cell 220 mhz with adaptor board 455 mm, device 80 mm over ground frequency range: 5 ... 220 mhz; 1 mhz steps test circuit 2 tested with static magnetic fields tested devices and results type field strength during test modulation result hal525 > 200 v/m output voltage stable on the level high or low 1) hal525 > 200 v/m 1 khz 80 % output voltage stable on the level high or low 1) 1) low level < 0.4 v, high level > 90% of v dd
hal525 micronas intermetall 16 5. data sheet history 1. final data sheet: ahal 525 hall effect sensor ico, april 23, 1997, 6251-465-1ds. first release of the final data sheet. 2. final data sheet: ahal 525 hall effect sensor ico, march 10, 1999, 6251-465-2ds. second release of the final data sheet. major changes: additional package sot-89b outline dimensions for sot-89a and to-92ua changed electrical characteristics changed section 4.2.: extended operating conditions added section 4.3.: start-up behavior added micronas intermetall gmbh hans-bunte-strasse 19 d-79108 freiburg (germany) p.o. box 840 d-79008 freiburg (germany) tel. +49-761-517-0 fax +49-761-517-2174 e-mail: docservice@intermetall.de internet: http://www.intermetall.de printed in germany order no. 6251-485-2ds all information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. any new issue of this data sheet invalidates previous issues. product availability and delivery dates are ex- clusively subject to our respective order confirmation form; the same applies to orders based on development samples deliv- ered. by this publication, micronas intermetall gmbh does not assume responsibility for patent infringements or other rights of third parties which may result from its use. reprinting is generally permitted, indicating the source. how- ever, our prior consent must be obtained in all cases.
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